Power package delivers DPAK performance in SO-8 footprint

NXP Semiconductors’ LFPAK package for power semiconductors, achieves 2°C/W thermal resistance to enable higher power ratings and improved reliability within the industry-standard SO-8 footprint.

Robust construction enables LFPAK to exceed the thermal-fatigue requirements of IPC9701. It is also the only power SO-8 package that meets the requirements of the Automotive Electronic Council AEC-Q101. LFPAK is also easier to handle, inspect and solder than other power SO-8 packages.

The low inductance of LFPAK allows use at high MOSFET switching speeds. When combined with the low on-resistance and gate charge of NXP’s TrenchMOS power MOSFET technology, LFPAK technology helps engineers quickly and easily meet design demands for increased power density, efficiency and reliability.

 

APPLICATIONS High-density DC/DC converters Voltage-regulator modules POL regulators

 

 

www.nxp.com/products/power_management/packaging/lfpak/indexhtml