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Low EMI and high efficiency from valley-switching converter



 

The FSQ0165RN DC/DC converter from Fairchild Semiconductor operates a valley-switching scheme resulting in lower EMI than a conventional, hard-switched converter with fixed switching frequency.


The device combines the PWM controller, optimised gate driver and MOSFET output stage to minimise component count and footprint.

The PWM controller includes an integrated fixed-frequency oscillator, Under-Voltage Lockout (UVLO), Leading-Edge Blanking (LEB), internal soft-start, temperature-compensated current sources for loop compensation, and self-protection circuitry. Variable frequency operation with inherent frequency modulation also helps to reduce EMI.

The integrated MOSFET output stage comprises a 650V SenseFET™, which is rated for maximum output current of 1A and has a low on-resistance of 10Ω to minimise conduction losses and thermal design challenges.

By implementing minimum-voltage switching, the FSQ0165RN achieves high efficiency, while advanced burst-mode operation modifies the converter behaviour to reduce switching losses in stand-by mode.

 

FEATURES
  • Universal AC input
  • 15W maximum output power
  • Pulse-by-pulse current limit
  • DIP-8 package
  • Operating temperature range:
    -40°C to 85°C
APPLICATIONS
  • External power adapters
  • Test and measurement equipment
  • Machine tools
  • Presentation equipment
  • Point-of-sale terminals

 


 

 www.fairchildsemi.com/pf/FS/FSQ0165RN.html

 

 

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