Power MOSFETs minimise thermal resistance for higher current density

Vishay Siliconix has introduced a series of power MOSFETs in PolarPAK® packages, which match the standard SO-8 footprint but achieve ultra-low thermal resistance through doublesided cooling.

On-resistance and gate-charge characteristics are also better than comparable devices in SO-8 packages. The resulting reduction in losses combines with improved cooling to enable high current densities for smaller board dimensions and fewer paralleled components.

Among the devices introduced, the SiE810DF and SiE808DF are rated for operation up to 20V. Vishay have also announced the SiE806DF for 30V applications, the SiE812DF rated to 40V and the SiE818DF for applications up to 75V. On-resistance ranges from 1.4mΩ for the SiE810DF to 9.5mΩ for the SiE818DF. These five devices prioritise low conduction losses to maximise operating efficiency.

The SiE830DF and SiE832D are intended for applications where switching losses have a greater effect on system performance. Featuring an optimised gate design and on-resistance of 4.2mΩ for the SiE830DF and 5.5mΩ for the SiE832DF, these devices are rated to 30V and 40V respectively.

In designs where paralleling of MOSFETs is unavoidable, the straightforward package pinout results in low PCB trace inductances for enhanced efficiency at higher frequencies.

 

FEATURES 0.8mm profile Inherent shoot-through protection Shared pin-out for all devices Die not exposed Operating temperature range: -50°C to 150°C

APPLICATIONS Voltage Regulator Modules (VRM) DC/DC converter low-side switching Synchronous rectification Primary-side switch (SiE818DF)

 

 

• NIC Components’ NRSG, page 080112

 

www.vishay.com/mosfets/polarpak-package/