4Mbit nvSRAM offers 15ns access to non-volatile data

A 4Mbit non-volatile Static Random Access Memory (nvSRAM) is now available with access times as low as 15ns, infinite read, write and recall cycles, and 20-year data retention.

Cypress Semiconductor’s nvSRAM offers high-speed, non-volatile data, for reliable storage without batteries. At power-down, data transfers from the SRAM to the device’s non-volatile elements automatically, on power-up, data is restored to the SRAM from the non-volatile memory. Both operations are available under software control.

nvSRAMs also reduce board space and design complexity compared to batterybacked SRAMs, and are more economical and reliable than Magnetic RAM (MRAM) or Ferroelectric RAM (FRAM) memories.

The 4Mbit nvSRAM joins 256kbit and 1Mbit nvSRAM devices currently shipping in production volumes. The new 4Mbit nvSRAMs are the first manufactured on Cypress’s S8™ 0.13-micron Silicon Oxide Nitride Oxide Silicon (SONOS) embedded non-volatile memory technology, enabling greater densities and improved performance. SONOS is highly compatible with standard CMOS technologies and offers numerous advantages, including high endurance, low power, and radiation hardness.

 

FEATURES 15ns, 25ns and 45ns access times Hands-off automatic STORE on power-down with only a small capacitor 8mA typical supply current at 200ns cycle time 200,000 store cycles to QuantumTrap 20-year data retention Single 3V (+20%, -10%) operation Commercial and industrial temperature ranges FBGA and TSOP-II packages RoHS compliant

APPLICATIONS RAID applications Harsh-environment industrial controls Data-logging functions Automotive applications Medical applications Data-communications systems

 

 

Cypress Semiconductor/nvSRAM