OR-ing MOSFETs reduce losses in redundant power systems
New power MOSFETs from Vishay
Siliconix have up to 36% lower onresistance
than comparable alternative
devices, to reduce losses in OR-ing
circuits of redundant power supplies.
Since OR-ing circuits carry the full load
current from the functioning power supply
after fail-over switching, improvements in
on-resistance realise significant energy
savings. By using the latest-generation
TrenchFET® technology, the Vishay Si4398DY,
Si7866ADP and SiE808DF achieve onresistance
values ranging from 1.6mΩ to
2.8mΩ. The gate charge is also reduced,
leading to lower switching losses. This
improves energy efficiency in a wide range
of power-conversion applications.
The three devices are rated for applications
up to 20V and maximum current of 25A,
40A or 60A. Packages offered include the
standard SO-8, plus two thermally-enhanced
packages for higher power density in systems
with or without a cooling fan or heatsink.
The Si7866ADP features the PowerPAK®
package, which shares the same footprint as
the standard SO-8 but benefits from enhanced
heat dissipation in still-air environments. By
using the PolarPAK® package, which is
optimised for cooling from both surfaces, the
SiE808DF delivers the highest performance in
systems with forced-air cooling.
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APPLICATIONS
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- Synchronous rectifiers
- DC/DC converters
- POL converters
- Uninterruptible Power Supplies (UPS)
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- ON Semiconductor’s NCP3102, page 080208
- Vishay’s FlipKY® Schottky diodes, page 080214
- Vishay Siliconix MOSFETs, page 080221
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