Microwave transistor combines silicon reliability with GaAs performance
The BFU725F NPN microwave
transistor from NXP Semiconductors
is built using SiGeC technology for
high switching frequencies, high gain
and low noise to serve highsensitivity
receiver applications.
Designed
to deliver
cost savings
compared to GaAs
pHEMT devices, the
BFU725F also saves the need for a biasing IC
or negative biasing voltage. This eliminates
external components and eases circuit design,
adding further benefits to using silicon-based
technology in high-frequency, ultra-sensitive
applications.
With 0.4dB of noise and 24.8dB of gain at
1.8GHz, the BFU725F is suitable for use in
high-performance cellular and microwave
communication devices. The high cut-off
frequency also allows use in satellite TV and
automotive collision-avoidance radar operating
in the 10GHz to 30GHz range.
FEATURES
 |
- 150GHz switching frequency
- 68GHz transition frequency
- 3.2V collector-emitter breakdown voltage
- 40mA maximum collector current
- SOT343F surface-mount package
|
 |
|
|
APPLICATIONS
|
- Digital-broadcast Low Noise Amplifier (LNA) and mixer
- Microwave LNA
- Satellite radio
- WLAN and CDMA infrastructure
- Ka-band Dielectric Resonator Oscillator (DRO)
|
|
|
|
Previous Page
Previous Page