Power MOSFET sets new switching, on-state and thermal benchmarks

Fairchild Semiconductor has introduced the FDMC2610, a 200V, N-channel trench MOSFET that achieves ultra-low Miller charge of 3.6nC for enhanced switching performance.

Combined with its low on-resistance of 200mΩ, the FDMC2610 achieves a 27% better Figure Of Merit (FOM) than comparable power MOSFETs to minimise losses in converter applications. Best-inclass thermal resistance of 3°C/W further enhances performance and reliability in demanding environments.

The FDMC2610 is delivered in a Moulded Leadless Package (MLP) measuring 3mm x 3mm (Power33 package), which delivers a 50% boardspace saving over common alternative devices in SO-8 packages.

Fairchild has also introduced 100V and 220V N-channel devices, as well as a 150V P-channel planar MOSFET in the same package style. This device option allows designers to satisfy activeclamp switch topologies requiring both N- and P-channel MOSFETs.

 

FEATURES 1.0mm package height Turn-on delay time: 17ns to 31ns Turn-off delay time: 29ns to 47ns Operating temperature range: -55°C to 150°C

APPLICATIONS DC/DC converters

 

 

 

• International Rectifier’s IR38xx, page 080203

 

Fairchild Semiconductor/FDMC2610