P-channel power MOSFETs cut conduction losses
The Siliconix family of p-channel MOSFETs
from Vishay Intertechnology offers
minimised on-resistance per unit area. The
Si10xx, Si14xx and SiAxx series MOSFETs
are therefore able to deliver low
conduction losses extending battery run
times, and are built with miniaturised
packages saving valuable board space.
In portable electronic systems, p-channel
MOSFETs save battery life by turning off features,
such as displays or power amplifiers, when not in
use, or by switching the system from active mode
to sleep mode. These Siliconix devices perform
switching tasks with less power than previously
possible with p-channel power MOSFETs since
their low on-resistance
ratings translate directly
into reduced powerconduction
losses.
Built on TrenchFET®
silicon technology, the
Vishay Siliconix devices
offer maximum onresistance
ratings of 29mΩ
in the PowerPAK® SC-70
package (2.05mm x
2.05mm), 80mΩ in the
standard SC-70 (2.0mm x
2.1mm) and 130mΩ in the
SC-89 (1.6mm x 1.6mm).
The p-channel TrenchFETs
include single-channel
devices with breakdown
voltage ratings of -12V, -
20V, and -30V.
APPLICATIONS
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- Load switching
- PA switching
- Battery switching
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- Vishay’s OR-ing Power MOSFETs, page 080205
- ON Semiconductor’s NCP3102, page 080208
- Vishay’s FlipKY® Schottky diodes, page 080214
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