Low-side MOSFET reduces losses in key parameters

A single-chip MOSFET and Schottky diode for low-side switching applications, eliminates the parasitic inductances of discrete or co-packaged devices to enhance performance and save board space.

With its integrated Schottky diode, Vishay Siliconix’s Si4642DY SkyFET™ displays reduced overall reverserecovery charge and forwardvoltage drop, which optimises efficiency under both light-load and heavy-load conditions. The integrated TrenchFET® MOSFET is also optimised for low losses, achieving 3.75mΩ on-resistance at 10V gate drive, and more than 55% lower on-resistance at 4.5V compared to equivalent co-packaged devices.

Together, these advantages allow the Si4642DY to demonstrate 91% efficiency when used as a low-side switch in a 300kHz, 6A DC/DC converter. This represents at least 6% improvement over circuits using alternative devices. The reduced parasitic inductance also results in smoother waveforms, reducing audible noise and easing thermal design.

 

FEATURES 34A continuous drain current 30V breakdown voltage SO-8 package 150°C maximum junction temperature

APPLICATIONS POL regulators Synchronous rectification in computers and servers Voltage Regulator Modules (VRM) Notebook PC core-voltage regulators Graphic cards

 

 

 

• Avago Technologies’ optocouplers, page 080410
• Zilog’s Z8 Encore! XP® F1680 MCUs, page 080416

 

Vishay: Si4642DY