Stable RF oscillation
Optocoupler-based negative differential-resistance
by Ofer Aluf, MSc (Physics), Optoelectronics Technical Specialist, Future Electronics (Israel)
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READ THIS TO FIND OUT ABOUT:
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- Achieving high-performance feedback with optocoupler-based differential-resistance.
- Designing and modelling negative differential behaviour using optocouplers.
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Negative Differential Resistance (NDR) is a property of
electrical circuits where current is a decreasing function of
voltage. The range of voltages for which this occurs is known
as a negative resistance region. Ofer Aluf, MSc (Physics),
Optoelectronics Technical Specialist, Future Electronics
(Israel), describes how NDR devices can be used to make
highly-stable, radio-frequency oscillators.
The optocoupler as an NDR element
Analogue optocouplers are normally Positive Differential Resistance (PDR)
components. However, they can produce NDR behaviour when
connected to a specific circuit design in a specific way. This design offers
flexibility, since changes to the optocoupler circuit design control the
negative differential parameters.

Fig. 1: Basic NDR circuit.
NDR-circuit operation
The elements of an NDR circuit are relatively simple. The circuit shown in
Figure 1 produces NDR behaviour, with the current increasing as the voltage
decreases.
An analogue optocoupler (4N35) uses a basic LED to emit light onto a
photo-transistor base. This photo-transistor is at the cut-off region as long as
the collector-emitter voltage is below the sustaining voltage (VS). When the
terminal voltage (VCE) of the photo-transistor reaches VS, the light output from
the LED generated by the collector current, due to the avalanche breakdown
of the photo-transistor, hits the base window of the photo-transistor.
At this point, the previously cut-off photo-transistor becomes active, and the
terminal voltage of the photo-transistor reduces in proportion to the LED
light’s intensity. The collector current of the photo-transistor causes a
corresponding increase in the light intensity from the LED. The photo-transistor
rapidly reaches saturation point due to the regenerative switching action of
the optical positive feedback loop from the LED to the photo-transistor.
Modelling NDR behaviour
The LED light which strikes the photo-transistor base window can be
represented as a dependent current source, depending on the LED’s forward
current, with a proportional k constant. The dependent current source is the
photo-transistor’s base current:
The basic Ebers–Moll transistor equations give the following for VCE:
For analysis, the optical coupling between the LED (D1) and the phototransistor
(Q1) of Figure 2 can be represented as a transistor base current
dependent on the LED (D1) current, where:
and:
assuming that
.
S1 is a dependent current source (IB = k * ID1). This circuit assumes that
k>1, in order to maintain the saturation process after break-over takes
place.

Fig. 2: NDR circuit capable of producing positive feedback.
As long as the photo-transistor is in the cut-off region, the currents IC, IE,
and IB will be very low. When the photo-transistor reaches the break-over
voltage, the photo-transistor enters the saturation region and VCE
decreases while IC increases. This is negative differential resistance
behaviour.
A positive-feedback loop then begins, in which the transistor’s collector
current increases until the photo-transistor reaches saturation state.
Finally an expression for voltage against current can be derived for the
NDR circuit. In this case (where IC = I) this expression is:
| Here it is assumed that: |
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The value changes as the process comes closer to the photo-transistor saturation region: dV(I)/dI = f(I, etc)
The dV(I) /dI equation can be shown as a parametric function with
some constants. For the region that is after the break-over voltage but
near enough to the cut-off region, NDR behaviour can be described thus:
For the region that is near and also in the photo-transistor’s saturation
state, NDR behaviour can be described thus:
For the cut-off region before the break-over k=0 generating the
expression:
Controlling NDR characteristics through optocoupler
parameters
Because each optocoupler has its own unique parameters (
)
replacing one optocoupler with another offers the ability to change NDR
characteristics.
Given that , the derived NDR equation is: |
Therefore the NDR sensitivity for each parameter is:
Assuming that k is constant, and is actually a non-linear function of the
NDR current (I), then k=k(I).
How to produce oscillations and regenerative amplification using an NDR circuit
The usual procedure for the production of oscillations in LC networks is to
overcome circuit losses by designing-in positive feedback or regeneration.
An optocoupler-based NDR device offers the oscillator best performance
in terms of the cancellation of resistive losses (see Figure 3).

Fig. 3: L-C oscillator circuit design using an optocoupler-based NDR circuit.
The total energy (U) present at any instant in the oscillating LC circuit is
given by:
System analysis based on the assumption that the circuit resistance is
zero, shows that there is no energy transfer to heat and that U remains
constant with time:
Where Utotal is a constant and dUtotal / dt = 0.
The condition for VoptoNDR = f(IoptoNDR) must fulfil the energy condition:
Therefore:
FM radio signal generation
The generator that produces the carrier of an FM waveform is, in
many instances, a tuned circuit oscillator. Parasitic resistance is a
common phenomenon in such oscillator circuits, but can be
eliminated by a conventional NDR element.

Fig. 4: Oscillator circuit for use as an FM carrier signal generator.
By enabling the smoother operation of an FM generator, an opto
NDR gives better performance than conventional NDR elements such
as tunnel diodes or Gunn diodes. Such an FM oscillator circuit is
shown in figure 4, where L1 is the inductance and C1 the capacitance.
This LC combination is in parallel with the opto NDR (the compensation
element) and with the parasitic resistance (R1).
In this case:
Therefore an equation for the FM-modulated frequency can be derived:
The capacitance value here, consists of a fixed capacitor (C1) which is
shunted by a voltage-variable capacitor (D1). A voltage-variable capacitor,
commonly called a Varicap, has a capacitance value that is dependent on the
DC-biasing voltage maintained across its electrodes. The FM-modulation signal
therefore varies the voltage (Cv) across D1. As a consequence, the capacitance
of D1 changes and causes a corresponding change in the oscillator frequency.
Conclusion
Analogue optocouplers are very basic components used in many
applications. They offer good isolation and the ability to vary the
coupling parameters by selecting optocouplers with different
specifications.
When used to implement an NDR circuit in an application such as
a high-frequency oscillator, an optocoupler offers good control of
parameters, and an optical mechanism for creating the NDR region.
This results in better performance than other commonly used NDR
components, such as tunnel diodes and Gunn diodes.