Trench-MOSFET losses reach new low

The Vishay Si7192DP power MOSFET has on-resistance of 2.25mΩ at 4.5V gate-drive voltage, and an on-resistance/gate-charge product of 98mΩ-nC, resulting in ultra-low losses in DC/DC converter applications.

Vishay has used third-generation TrenchFET® technology to achieve this low-loss performance. The 98mΩ-nC figure of merit is the industry’s lowest among 30V power MOSFETs meeting the SO-8 footprint and rated for gate-drive voltage up to 20V. The device is offered in the enhanced PowerPAK® SO-8 package, which matches the standard SO-8 footprint and has a nominal height of 0.28mm.

When used as the low-side MOSFET in synchronous buck converters and in secondary synchronous-rectification and OR-ing applications, the Si7192DP’s low conduction and switching losses will enable designers to achieve greater power density.

 

FEATURES 60A continuous rated drain current Halogen free 100% gate-resistance tested 100% avalanche tested

APPLICATIONS Voltage Regulator Modules (VRM) Servers Distributed power architectures Point-of-Load (POL) converters

 

 

Vishay / Si7192DP