MOSFETs for mobile devices are specified at 1.2V gate drive
For reliable turn-on of load switches in
systems with a core voltage below 1.8V,
Vishay is offering a family of MOSFETs
with on-resistance specified at gate-to-source
voltages down to 1.2V.
This innovation saves engineers from
implementing extra level-shifting circuitry or
operating the MOSFET below the lowest
specified gate-to-source voltage, where on-resistance
tends to increase exponentially.
The devices are particularly valuable in mobile
products, where space savings and energy
efficiency are of paramount
importance.
A total of nine single
n- and p-channel devices
are available, offering
n-channel on-resistance
down to 0.041Ω and
p-channel on-resistance
down to 0.095Ω at 1.2V
gate drive. Additionally,
on-resistance performance
at 1.5V gate drive is
better than in devices
for which 1.5V is the
lowest gate-to-source
specification.
The devices are available in a variety of power
packages, including the 2mm x 2mm
PowerPAK® SC-70, 1.6mm x 1.6mm PowerPAK
SC-75 and 1.5mm x 1.5mm MICRO FOOT®.
APPLICATIONS
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- Load switches
- Power amplifier switching
- Battery-charger switching
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- Vishay’s Schottky diodes, page 080619
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