High-temperature Schottky diodes enhance size, cost and power
Vishay’s fifth-generation technology for
Schottky diodes is offering eight new
parts that enhance forward-voltage-drop
and reverse-leakage characteristics for
lower losses, as well as increasing the
maximum junction temperature to 175°C
to serve high-temperature applications.
The fifth-generation sub-micron trench
technology delivers a 30% improvement in
power density, as well as lower cost compared
to previous devices using planar technology.
Combined with small, RoHS-compliant
packages, the new devices deliver a
significantly greater power-to-cost ratio for
designers.
The series offers a very low typical forward
voltage drop, between 0.55V at 8A and 0.61V
at 30A, as well as extremely low typical
reverse leakage from 1mA to 5.5mA at
125°C, with very tight parameter
distribution. They feature increased
ruggedness for reverse avalanche
capability, with 100% screening in
avalanche as well as negligible
switching losses.
The new diodes are optimised for
use in AC/DC converters, secondary
rectification circuits, flyback converters,
buck and boost converters, half-bridge
rectifiers, reverse-battery protection
circuits, freewheeling circuits, class-D
amplifiers, and DC/DC modules.
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APPLICATIONS
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- High power-density SMPS
- Automotive drives and controls
- Telecom network equipment
- Server power supplies
- High-efficiency audio systems
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