IGBT families support application-optimised design

Designers using IGBTs in hard-switching or resonant topologies can match transistor characteristics to application requirements by selecting from Vishay’s latest range of eight devices spanning current ratings from 75A to 200A and voltages from 600V to 1200V.

Among the new devices, the GA100TS60SFPbF and GA200HS60S1PbF are standard-speed Punch-Through (PT) IGBTs optimised for maximum efficiency in hard-switching applications up to 1kHz.

There are also six ultra-fast devices optimised for use at higher operating frequencies. All are delivered as modules co-packaged with HEXFRED® ultra-soft-recovery antiparallel diodes for use in bridge configurations. Three punch-through IGBTs feature tight parameter distribution and high efficiency to operate from 8kHz to 60kHz in hard-switching applications and above 200kHz in resonant mode.

In applications requiring short-circuit capability, three ultra-fast Non-Punch-Through (NPT) IGBTs are capable of withstanding short-circuit conditions up to 10µs duration in hard-switching circuits operating from 8kHz to 60kHz.

All devices are delivered in the industry-standard Int-A-Pak package using Direct Bonded Copper (DBC) construction, which achieves low thermal resistance and enables direct heatsink connection for thermally-efficient system design.

 

FEATURES PT devices use fourth-generation fabrication technology Fifth-generation NPT technology Low conduction losses

APPLICATIONS Industrial welding equipment SMPS Uninterruptible Power Supplies (UPS) Solar inverters Motor drives

 

 

 

 

• Zetex Semiconductors’ ZXGD3000, page 080713
• Orion’s tachometer-output fans, page 080718

 

Vishay / IGBT modules