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Memory


Memory is changing. New product introductions, and a new online memory superstore, are bringing more flexibility to the design and sourcing of memory components.

Each application, from portable devices to high-data-rate storage, places different demands on volatility, capacity, performance, dimensions, weight, and power consumption.

In answer to this, leading manufacturers such as Cypress Semiconductor, Microchip, Freescale Semiconductor, SST, Ramtron, Macronix and Rohm are offering an array of technological developments for both non-volatile and static memory.

 

Non-volatile memory

At the high-density end of the spectrum, Flash memory usage is continuing to increase year on year, with multi-I/O serial Flash delivering superior performance (see page 18). In the low-density market, however, new technologies are emerging to compete with the dominant EEPROM/battery-backed RAM suppliers. Advances such as F-RAM (page 17), and MRAM (page 15) remove the need for a battery, reducing overall energy consumption.

Future Electronics' technical director (EMEA) reviews the new nonvolatile technologies and provides an objective comparison on page 20.

 

New online memory superstore

In a few short years SRAM has gone from writing or reading one byte of data at a time, to transferring four words simultaneously and offering synchronous bursting of data. However, with many suppliers narrowing their SRAM product range, sourcing from a comprehensive and reliable family of products has never been more important. Future Electronics’ new online Memory Superstore at memorysuperstore.net provides an early warning for SRAM parts with end of life issues and offers a cross-referenced search for a secure alternative. The latest SRAM parts are introduced on pages 14, 15, 17 and 19.

 


 


 

Synchronous SRAMs extend performance and value for all applications



 


As an industry leader in high-density synchronous SRAMs, Cypress Semiconductor has a broad portfolio covering standard pipelined and flow-through products, No-Bus-Latency™ (NoBL) SRAMs, and today’s fastest, highest-density Quad Data Rate (QDR), Double Data Rate (DDR) and DDRII+ devices.

This comprehensive selection of technologies allows designers to achieve an optimal memory architecture meeting important constraints including bus latency, supply voltage, operating frequency, component count and cost.

For leading-edge networking applications, Cypress has QDR and DDR/DDRII+ memories in speeds up to 550MHz and densities from 9Mbyte to 72Mbyte. This will be supported on 65nm technology, available at the end of the year. As a member of the QDR Consortium, Cypress is a technology and market innovator combining extensive investment in 90nm and 65nm process technologies with best-in-class manufacturing and customer support to deliver outstanding performance, competitive pricing and value.

Cypress’s portfolio of standard SRAM and NoBL devices covers densities from 1Mbyte to 72Mbyte, operating frequencies up to 250MHz, and 3.3V or 2.5V supply-voltage standards.

 

FEATURES
  • Industrial and commercial temperature ranges
  • TQFP and BGA packages
  • Roadmap to 65nm process geometry and 144Mbyte density
APPLICATIONS
  • Switches and routers
  • Base stations
  • Test equipment
  • Telecommunications
  • Medical devices
  • Data communications

 


 

 


  • Clare’s CPC1317 solid-state relay, page 080710
  • connectBlue’s OZSPA311, page 080715

 

 

 

  Cypress Semiconductor / Synchronous SRAMs

 

 

 

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