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2Mb RAMs need no backup battery



 


The latest Ferroelectric RAM (F-RAM) devices from Ramtron now provide 2Mb storage within a 5mm x 6mm TDFN footprint and feature low-voltage operation, delivering a non-volatile, battery-less storage solution for devices such as meters, printers and medical instruments.

The Ramtron FM25H20 features a high-speed Serial Peripheral Interface (SPI) and writes at maximum bus speed, achieving write-endurance which is orders of magnitude greater than Flash memories. The FM25H20’s high data-collection capacity and tiny package dimensions enable savings in cost and board space for a range of advanced applications. Hardware and software write-protection, also included on the FM25H20, prevent inadvertent writes and data corruption.

In addition to its high density and high endurance, F-RAM also provides fast access times and low operating current compared to alternative memories such as Flash. The FM25H20 draws less than 10mA for reads and writes at 40MHz, 80µA (typical) in standby, and 3µA (typical) in sleep mode. It is also pin-compatible with equivalent serial Flash devices.

 

FEATURES
  • High density and endurance
  • Low power consumption
  • 256kbyte x 8 organisation
  • Operating voltage range: 2.7V to 3.6V
  • Industrial temperature range:
    -40°C to 85°C
  • 8-pin TDFN package
APPLICATIONS
  • Meters
  • Printers
  • Hearing aids
  • Portable equipment
  • Test and measurement systems

 


2Mbit serial F-RAM puts high data-collection capacity in a tiny package.

 

  Ramtron / FM25H20

 

 

 

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