2Mb RAMs need no backup battery
The latest Ferroelectric RAM (F-RAM)
devices from Ramtron now provide
2Mb storage within a 5mm x 6mm
TDFN footprint and feature low-voltage
operation, delivering a non-volatile,
battery-less storage solution
for devices such as meters, printers
and medical instruments.
The Ramtron FM25H20 features a high-speed
Serial Peripheral Interface (SPI) and writes at
maximum bus speed, achieving write-endurance
which is orders of magnitude greater than Flash
memories. The FM25H20’s high data-collection
capacity and tiny package dimensions enable
savings in cost and board space for a range of
advanced applications. Hardware and software
write-protection, also included on the FM25H20,
prevent inadvertent writes and data corruption.
In addition to its high density and high
endurance, F-RAM also provides fast access
times and low operating current compared
to alternative memories such as Flash. The
FM25H20 draws less than 10mA for reads
and writes at 40MHz, 80µA (typical) in
standby, and 3µA (typical) in sleep mode. It
is also pin-compatible with equivalent serial
Flash devices.
FEATURES
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- High density and endurance
- Low power consumption
- 256kbyte x 8 organisation
- Operating voltage range: 2.7V to 3.6V
- Industrial temperature range:
-40°C to 85°C
- 8-pin TDFN package
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APPLICATIONS
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- Meters
- Printers
- Hearing aids
- Portable equipment
- Test and measurement systems
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2Mbit serial F-RAM puts high data-collection capacity in a tiny package.