Ferroelectric memory performs like battery-backed SRAM without the disadvantages

The FM28V100 is a 128K x 8 non-volatile Ferroelectric Random Access Memory (F-RAM) that reads and writes like a standard SRAM and retains data after power is removed.

Ramtron’s FM28V100 provides data retention for over 10 years while eliminating the reliability concerns, functional disadvantages, and system design complexities of Battery-Backed SRAM (BBSRAM).

The in-system operation of the FM28V100 is similar to other RAM devices. It offers fast writes and virtually unlimited endurance, allowing it to be used as a drop-in replacement for standard SRAM. Read and write cycles may be triggered by toggling a Chip Enable pin or by simply changing the address.

F-RAM memory is non-volatile due to its ferroelectric memory process, making it ideal for applications that require frequent or rapid writes. The device is specified over the industrial temperature range of -40°C to 85°C and is available with I²C and SPI serial interfaces.

 

FEATURES 1e14 read/write cycles Page-mode operation to 33MHz JEDEC 128K x 8 SRAM pinout 60ns access time 90ns cycle time 2.0V to 3.6V operation 80µA (typical) standby current 15mA (maximum) active current 32-pin green/RoHS packages

APPLICATIONS Control, medical, automotive and metering applications Industrial control Robotics Utility metering RAID controllers Industrial PCs

 

 

Ramtron / FM28V100