0.13µ Process Offers High-Speed, Non-Volatile Memory Up to 8Mbit

Non-volatile Static Random Access Memories (nvSRAMs) feature access times as low as 20ns; infinite read, write and recall cycles; and 20-year data retention. Cypress’s latest 0.13µ process means their nvSRAMs are now available up to 8Mbit.

The 2Mbit CY14B102 and 8Mbit CY14B108 directly replace SRAM, battery-backed SRAM, EPROM and EEPROM devices, offering reliable non-volatile data storage without batteries. Data transfers from the SRAM to the device’s non-volatile elements take place automatically at power-down. On power-up, data is restored to the SRAM from the non-volatile memory. Both operations are also available under software control.

The CY14B102 and CY14B108 are manufactured on Cypress’s S8™ 0.13µ Silicon Oxide Nitride Oxide Silicon (SONOS) embedded non-volatile memory technology. This has enabled greater densities with improved access times and performance.

These nvSRAMs feature a real-time clock that enables low standby oscillator current, and event time-stamping supported by non-volatile memory.

The new higher-density nvSRAMs allow a wider range of applications to benefit from continuous high-speed writing and absolute non-volatile data security.

 

FEATURES 20ns, 25ns, and 45ns access times 1024k x 8 (CY14B108L) 512k x 16 (CY14B108N) Hands-off automatic STORE on powerdown with only a small capacitor STORE to QuantumTrap® non-volatile elements initiated by software, device pin, or AutoStore® on power-down RECALL to SRAM initiated by software or power-up 200,000 STORE cycles to QuantumTrap Commercial and industrial temperatures 48-pin FBGA, 44- and 54-pin TSOP II packages

APPLICATIONS RAID applications Harsh-environment industrial controls Data communications Automotive Medical Computing Servers

 

 

Cypress Semiconductor / CY14B102 / CY14B108