Schottky Diodes Increase Power Density for High-Temperature Applications

Built on sub-micron trench technology, Vishay’s 30CTT045 and 60CPT045 Schottky diodes offer extremely low forward-voltage drop and low reverse leakage.

A high and stable breakdown voltage accommodates voltage spikes and further optimises power density. These high-performance 45V Schottky diodes offer a maximum junction temperature of 175°C, allowing designers to increase power density in high-temperature applications.

The maximum forward-voltage drop of these devices is typically below 0.5V at 30A for the 60CPT045, and typically below 0.5V at 15A for the 30CTT045 at 125°C. Reverse leakage at 125°C is only 5mA and 2mA for the respective devices, with very tight parameter distribution. Both devices offer an optimised trade-off between forward voltage and reverse current for increased system efficiency. The 30CTT045 is offered in a TO-220 package, while the 60CPT045 is offered in a TO-247 package.

 

FEATURES 175°C maximum junction temperature Reverse leakage at 125°C 5mA (60CPT045) 2mA (30CTT045) Increased ruggedness enabling reverse avalanche capability Negligible switching losses Sub-micron trench technology

APPLICATIONS High-efficiency SMPS Automotive power modules High-frequency switching systems Output rectification Reverse-battery protection DC/DC systems

 

 

 

• Fairchild Semiconductor’s FAN2108, page

 

Vishay / 30CTT045 & 60CPT045