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Silicon and Package Enhancements Boost Power-MOSFET Performance



 


By achieving on-resistance as low as 1.7mΩ within the standard SO-8 footprint, NXP’s range of 30V Trench 6 logic-level MOSFETs enable high-power density and efficiency in power converters and power-ORing systems.

Trench 6 technology also delivers low gate-charge and low gate-resistance making the devices suitable for switching frequencies typically up to 1MHz. They are especially suited for use in high-efficiency synchronous buck regulators.

The devices are delivered in a Loss-Free Package (LFPAK) matching the widely-used 5mm x 6mm outline but bringing extra benefits by reducing package height to 1mm. In addition, low thermal resistance and low package inductance contribute to the high current capability and switching frequency of the Trench 6 family. As a further benefit, the package is compatible with visual inspection techniques, unlike many other Power-SO8 devices.

 


APPLICATIONS
  • Voltage regulators
  • Motor control
  • Power ORing
  • Load switching
  • Li-ion battery protection
  • LED lighting controls

 

 

Product launch packs are available.
To apply for your free pack,
please email info@my-ftm.com

 


 

  NXP Semiconductors / Trench 6 MOSFETs

 

 

 

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