ROHM Semiconductor – New SiC power module BSM180D12P3C007 offers hugely improved switching performance


SiC power modules: lower electrical stress for long lifetime

SiC power modules: lower electrical stress for long lifetime

ROHM Semiconductor has introduced a new 180A Silicon Carbide (SiC) power module which benefits from the dramatic reduction in on-resistance provided by the double-trench structure of its latest SiC MOSFETs.

The BSM180D12P3C007 module is a 1,200V/180A full SiC power module which includes third-generation SiC trench MOSFETs. In the new MOSFETs, on-resistance is cut in half by comparison with the previous generation of SiC MOSFETs, which have a planar structure. Input capacitance in the new devices is some 35% lower.

As a result, switching losses in the new BSM180D12P3C007 module are reduced by 42% compared to the ROHM BSM180D12P2C101 module, which contains planar MOSFETs.

The new double-trench structure also enhances the long-term reliability of the new module, since it diffuses the electric field concentrated at the base of the gate trench, lowering the electrical stress on the device compared to a MOSFET with a conventional single-trench structure.

ROHM has also expanded its line-up of full SiC power modules with the new 1,200V/300A BSM300D12P2E, adding to the 120A/180A devices already available. The new module is suitable for large power supplies in industrial equipment, providing much reduced switching losses when compared to conventional silicon IGBT power modules.


  • 180A maximum drain current at a 60°C case temperature
  • Junction-temperature range: -40°C to 175°C
  • 2,500V AC isolation voltage (1 minute)
  • 10mΩ typical on-resistance at an 18V gate-source voltage, drain current of 180A and a junction temperature of 25°C


  • Motor drives
  • Inverters
  • Power converters
  • Induction heating equipment