STMicroelectronics – New power MOSFETs get close to perfect switching performance

STMicroelectronics has extended its popular MDmesh™ M2 series of N-channel power MOSFETs with the introduction of a new family of devices which offer the industry’s highest power efficiency, especially under light-load conditions.

With these new devices, designers can create switching power-conversion circuits which are lighter and more compact, while more easily meeting increasingly stringent energy-efficiency targets.

The new 600V MDmesh M2 EP devices combine ST’s proven strip layout with a new improved vertical structure and an optimised diffusion process to produce performance close to that of the ideal switch: they combine very low on-resistance and the lowest known turn-off switching losses.

The MDmesh M2 EP MOSFETs are tailored for very high-frequency converters switching at higher than 150kHz. Ideal for both hard- and soft-switching topologies, including resonant topologies such as LLC, the new devices offer extremely low switching losses, especially under light-load conditions.

In addition to the very low gate charge found in all MDmesh M2 devices, the M2 EP devices also feature up to a 20% reduction in turn-off energy, thus reducing by the same percentage the turn-off switching losses in hard-switching converters. This reduction in the low-current range boosts efficiency under light-load conditions, where efficiency regulations are becoming increasingly demanding.

The enhanced shape of the turn-off waveforms leads to higher efficiency and lower noise in resonant converters, allowing more energy to be stored and re-used, rather than dissipated as heat, cycle by cycle.


  • Extremely low gate charge
  • Excellent output-capacitance profile
  • 100% avalanche-tested
  • Zener-protected


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