Vishay – Efficient 600V MOSFETs reduce effects of gate loop inductance

Vishay Intertechnology has extended its 600V E series of power MOSFETs with new devices housed in its compact PowerPAK® 8mm x 8mm package, providing a space-saving alternative to conventional TO-220 and TO-263 solutions.

The new Vishay Siliconix SiHH2xxN60E parts feature a large drain terminal for low thermal resistance. In addition, the construction of the PowerPAK® 8×8 package allows one of the source pins to be arranged as a dedicated Kelvin source connection which separates the gate-drive return path from the main current-carrying source terminals.

This prevents the voltage drop in the high-current path attributable to gate loop inductance from reducing the gate-drive voltage applied to the MOSFET. This in turn leads to faster switching and better noise immunity in high-performance power-supply designs.

Based on Vishay’s latest energy-efficient E series superjunction technology, the SiHHxxN60E devices offer low on-resistance and gate charge. These values result in extremely low conduction and switching losses, helping reduce energy consumption in power factor correction circuits, flyback converters, and two-switch forward converters. They are designed to withstand high energy pulses in the avalanche and commutation modes.

Part NumberDrain-source Voltage (V)Gate-source Voltage (V)Drain Current (A) at 25°CMaximum Onresistance (Ω) at 10VTypical Gate Charge (nC) at 10VTypical Gate Capacitance (pF)
SiHH26N60E 600±30250.135772815



  • 353mJ maximum pulse avalanche energy
  • 0.48°C/W junction-to-case thermal resistance
  • Junction-temperature range: -55°C to 150°C


  • Server and telecoms power supplies
  • HID and fluorescent lighting ballasts
  • Power adaptors
  • Motor drives
  • Solar PV inverters
  • Induction heating
  • Welding equipment