Microsemi : SiC power MOSFETs offer high speed and temperature capabilities

pg15_Microsemi_1
logo_MicroSemi
Power Supply

Microsemi supplies a range of Silicon Carbide (SiC) power MOSFETs which offer fast-switching capability and stable high-temperature performance, making them suitable for use in the high-density switching power supplies found in robotic arms and other kinds of industrial-automation equipment.

Compared to high-voltage silicon MOSFETs, the SiC MOSFETs from Microsemi offer lower on-resistance, higher operating temperature, higher power density and lower switching losses.

The Microsemi range of 1,200V SiC MOSFETs includes devices rated for a maximum current of 25A, 40A, 50A and 80A. The 700V APT70SM70x devices are rated for a current of 70A.

• Low temperature coefficient of on-resistance
• Low gate charge
• 8μs short-circuit withstand time

 

Leave a Reply

Your email address will not be published. Required fields are marked *

Protected by WP Anti Spam