ROHM Semiconductor : New SiC power module BSM180D12P3C007 offers greatly improved switching performance

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ROHM SiC module: very low on-resistance

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Power Supply

ROHM Semiconductor has introduced a new 180A Silicon Carbide (SiC) half-bridge power module which benefits from the dramatic reduction in on-resistance provided by the double-trench structure of its latest SiC MOSFETs.

The BSM180D12P3C007 module is a 1,200V/180A full SiC power module which includes third-generation SiC trench MOSFETs. In the new MOSFETs, on-resistance is cut in half by comparison with the previous generation of SiC MOSFETs, which have a planar structure. Input capacitance in the new devices is some 35% lower.

The fast and efficient operation of the module makes it ideal for use in demanding and high-temperature industrial-automation applications.
• 180A maximum drain current at a 60°C case temperature
• Junction-temperature range: -40°C to 175°C
• 2,500V AC isolation voltage (1 minute)

 

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