STMicroelectronics has launched a series of dual-configuration Schottky Silicon Carbide (SiC) diodes in a choice of common-cathode or series configurations, allowing their use in interleaved or bridgeless Power-Factor Correction (PFC) circuits.
Like other types of SiC power semiconductors, the new SiC diodes are inherently more energy efficient and rugged than equivalent silicon parts.
The STPSCxxTH13TI and STPSCxxH065C devices combine the performance advantages of the SiC material with the space savings and reduced EMI emissions that are a feature of dual integrated diodes.
The new ST diodes eliminate energy losses due to reverse recovery at turn-off, resulting in very high switching efficiency. The high 650V voltage rating provides a large safety margin for extra protection against hazardous reverse-voltage spikes.
In addition, ceramic isolation built into the package of the STPSCxxTH13TI devices simplifies their attachment to an external heat sink, enabling the usual external isolation material to be eliminated, and to improve the thermal resistance by 19% compared to a standard TO-220AB package.
|Part Number||Package||Maximum Average Rectified Current (A)||Maximum Forward Voltage (V)||Maximum Reverse Current (mA)||Total Capacitive Charge (nC)|
|STPSC20H065C||D2PAK; TO-220AB; TO-247||10||1.75||0.1||28.5|
- High forward surge-current capability
- Switching behaviour independent of temperature
- 175°C maximum junction temperature
- Server power supplies
- Telecoms power supplies
- Solar inverters
- Electric-vehicle charging stations