The PESD1IVN-U from NXP Semiconductors is an ESD protection diode for in-vehicle networks housed in a small SOT323 (SC-70) surface-mount plastic package.
It is intended to provide protection to one automotive in-vehicle network line from the damage caused by ESD and other transients. NXP also supplies the PESD2IVN-U, which protects two network lines.
The PESD1IVN-U provides a high level of protection against ESD strikes. It is rated for 18kV of protection against contact discharges according to the IEC 61000-4-2 standard, level 4. On the human body model, its MIL-STD-883 rating is 10kV. Its surge current rating is 3A for an 8/20μs pulse, consistent with the provisions of the IEC 61000-4-5 standard.
The PESD1IVN-U may be used safely in ambient temperatures ranging from
-55°C to 150°C. Its maximum junction temperature is 150°C. The device’s specification for reverse leakage current is a tiny 1nA.
- 38V clamping voltage at 1A
- 26.5V maximum reverse stand-off voltage
- 32V maximum breakdown voltage
- 8.5pF diode capacitance
- AEC-Q101 qualified
- CAN, LIN, FlexRay™ and SENT interfaces
- General automotive applications