Fairchild Semiconductor – SiC diode’s superior switching performance saves energy and reduces EMI

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Fairchild Semiconductor has released the FFSH40120ADN 1,200V Silicon Carbide (SiC) diode, offering a combination of superior switching performance, high reliability and low EMI. These attributes make the diode ideal for use in equipment in which the prime requirements are for high energy efficiency and power density.

The FFSH40120ADN is able to operate at extremely fast switching speeds with no reverse-recovery current, resulting in dramatically lower switching losses than equivalent silicon diodes produce. Faster switching also allows manufacturers to reduce the size of their products’ magnetic coils and associated passive components, which improves packaging efficiency, reduces system weight and can reduce bill-of-materials cost.

The FFSH40120ADN diode also has the best leakage-current performance in its class at operating temperatures up to the maximum 175°C. Its switching performance is stable over a wide temperature range, and its zero recovery voltage eliminates voltage overshoots.

The SiC material from which the FFSH40120ADN is made offers markedly superior thermal properties to silicon, giving the diode considerably greater ruggedness and reliability. The breakdown field of SiC is ten times higher than that of silicon. SiC also offers three times higher thermal conductivity.

APPLICATIONS

  • Switch-mode power supplies
  • Solar inverters
  • Uninterruptible power supplies
  • Industrial motor controls
  • Welding equipment

FEATURES

  • 200mJ avalanche rating
  • High surge-current capability
  • Positive temperature coefficient
  • Easy to combine diodes in parallel

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