ON Semiconductor – IGBTs benefit from Field Stop III technology with faster switching and lower losses

ON Semiconductor: low-loss IGBTs suitable for solar-power inverters

ON Semiconductor: low-loss IGBTs suitable for solar-power inverters

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ON Semiconductor has launched a new family of IGBTs employing trench/field-stop technology, to provide a new option for power systems switching at up to 50kHz and requiring high efficiency.

The new Field Stop III family offers improved conduction and switching characteristics as well as a superior freewheeling diode. Use of Field Stop III IGBTs provides for a reduction in power losses of up to 30% compared to the previous generation of Field Stop IGBTs. The first IGBTs in the family are the NGTBxxN120FL3WG and NGTBxxN120L3WG.

Featuring excellent switching characteristics and reduced conduction losses at high currents, these rugged devices are well suited to industrial applications.

Users of the new Field Stop III family benefit from ON Semiconductor’s long track record of quality and reliability in IGBTs.

ON Semiconductor has had automotive-qualified IGBTs in production for more than a decade.

In 2011, the company started developing new high-voltage, high-current devices for the growing industrial and consumer markets, which demand high-efficiency solutions.

ProductMaximum Voltage RatingCurrent Rating at 100°CSaturation VoltageTurn-off EnergyReverse-recovery Time
NGTB25N120FL3WG 1,200W 25A 1.7V 0.7mJ 90ns
NGTB40N120FL3WG 1,200W 40A 1.7V 1.1mJ 86ns
NGTB40N120L3WG 1,200W 40A 1.55V 1.5mJ 86ns
APPLICATIONS

  • Uninterruptible power supplies
  • Battery chargers
  • Renewable-energy inverters
  • Motor drives
  • Welding equipment
FEATURES

  • 175°C maximum junction temperature
  • Soft and fast reverse-recovery diode
  • 200nA maximum gate leakage current (NGTB25N120FL3WG)
  • Stable switching performance over temperature

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