The new Field Stop III family offers improved conduction and switching characteristics as well as a superior freewheeling diode. Use of Field Stop III IGBTs provides for a reduction in power losses of up to 30% compared to the previous generation of Field Stop IGBTs. The first IGBTs in the family are the NGTBxxN120FL3WG and NGTBxxN120L3WG.
Featuring excellent switching characteristics and reduced conduction losses at high currents, these rugged devices are well suited to industrial applications.
Users of the new Field Stop III family benefit from ON Semiconductor’s long track record of quality and reliability in IGBTs.
ON Semiconductor has had automotive-qualified IGBTs in production for more than a decade.
In 2011, the company started developing new high-voltage, high-current devices for the growing industrial and consumer markets, which demand high-efficiency solutions.
|Product||Maximum Voltage Rating||Current Rating at 100°C||Saturation Voltage||Turn-off Energy||Reverse-recovery Time|
- Uninterruptible power supplies
- Battery chargers
- Renewable-energy inverters
- Motor drives
- Welding equipment
- 175°C maximum junction temperature
- Soft and fast reverse-recovery diode
- 200nA maximum gate leakage current (NGTB25N120FL3WG)
- Stable switching performance over temperature