ROHM Semiconductor has introduced three new Silicon Carbide (SiC) Schottky barrier diodes featuring a breakdown voltage of 650V, which far exceeds the upper limit for the equivalent silicon-based devices.
The SCS310AP is rated for a maximum continuous forward current of 10A. The SCS308AP’s current rating is 8A, and the SCS306AP carries a maximum current of 6A.
Compared to silicon Fast Recovery Diodes (FRDs), SiC Schottky barrier diodes feature a much lower reverse-recovery current and recovery time. This results in dramatically lower recovery loss and noise emissions. Furthermore, unlike silicon FRDs, these characteristics do not change significantly over current and operating temperature ranges.
The implementation of SiC Schottky barrier diodes in power-system designs allows users to improve efficiency, lower the cost and size of the heat-sink, and increase switching frequency to reduce the size and cost of magnetic components.
SiC Schottky barrier diodes are increasingly applied in PFC circuits and in secondary-side bridge rectifiers in switch-mode power supplies.
- Air-conditioning equipment
- Solar power conditioners
- Electric-vehicle chargers
- Industrial equipment
- 175°C maximum junction temperature
- 15ns switching time
- TO-220ACP package
- Low total capacitive charge