The SCT20N120 Silicon Carbide (SiC) power MOSFET extends the STMicroelectronics family of robust and efficient SiC power semiconductors. It features a maximum breakdown voltage of 1,200V and a maximum continuous-current capability of 20A.
The high efficiency of the SCT20N120 is due in large part to its low on-resistance, which is just 220mΩ at the device’s 200°C maximum operating junction temperature and 169mΩ at 25°C. Switching performance is also consistent, benefitting from highly stable turn-off energy and gate charge over the full operating temperature range. The resulting low conduction and switching losses, combined with ultra-low leakage current, simplify thermal management and improve the reliability of the circuit.
As well as lowering energy losses, ST’s SiC MOSFETs also enable power systems to use switching frequencies up to three times higher than is possible with similarly rated silicon IGBTs. This means that designers can specify smaller external components and save size, weight and bill-of-materials costs. The SCT20N120’s high-temperature capability also helps to simplify the design of the cooling system in applications such as power modules for electric vehicles.
STMicroelectronics also supplies the SCT30N120, which has a maximum rated continuous drain current of 40A.
Both parts have the added advantage of ST’s thermally-efficient HiP247™ package, which allows reliable operation at up to 200°C while maintaining compatibility with the industry standard TO-247 footprint.
- Solar inverters
- Uninterruptible power supplies
- Motor drives
- High-voltage DC-DC converters
- Switch-mode power supplies
- Very tight variation of on-resistance over temperature
- Slight variation of switching losses over temperature
- Very fast and robust intrinsic body diode
- Low capacitance
- Easy to drive