The new MDmesh™ K5 family of power MOSFETs from STMicroelectronics allows designers of power supplies to maximise the power efficiency of their products while enhancing robustness and boosting safety margins.
The STW12N150K5 and the STW21N150K5 offer maximum drain-to-source currents of 7A and 14A respectively. They are the world’s first MOSFETS to combine the benefits of super-junction technology with a high drain-to-source breakdown voltage of 1,500V.
The new devices address the growing demand for higher output power for auxiliary switched-mode power supplies in servers, in which a robust power supply can help to prevent instances of downtime, and in industrial applications such as welding and factory automation. For these applications, in which power output ranges from 75W to more than 230W, super-junction MOSFET technology is the preferred choice because of its outstanding dynamic-switching performance.
In the MDmesh K5 power MOSFET family, ST’s super-junction technology produces very low on-resistance as a function of area. In the STW21N150K5, on-resistance is rated at 0.9Ω. The technology also underpins the superior 47nC gate charge of the STW12N150K5. Both devices offer an outstandingly good MOSFET Figure of Merit (FoM).
The devices are ideal for all popular power-supply topologies, including for applications in which high efficiency of up to 96% and output power of up to 200W are required across a wide range of input voltages.
- Quasi-resonant power converters
- Active-clamp flyback converters
- LLC half-bridge converters
- 100% avalanche tested
- ±10μA gate body leakage current
- 28A maximum pulsed current