Vishay – New MOSFETs give more voltage headroom for soft-switching power circuits


Vishay Intertechnology has expanded its portfolio of N-channel power MOSFETs, introducing the 650V EF series devices to provide greater voltage headroom when compared to the existing 600V E series MOSFETs.

Benefitting from the super-junction MOSFET technology on which the E series MOSFETs are based, the 650V EF devices offer a ten times lower reverse-recovery charge than standard MOSFETs. This enables them to regain the ability to block the full breakdown voltage more quickly, helping to avoid failure from shoot- through and thermal over-stress.

The new EF MOSFETs, which include a fast body diode, may be used in advanced power circuit designs: they are particularly well suited to Zero-Voltage Switching (ZVS) and soft- switching topologies such as phase-shifted bridges and LLC converter half-bridges.

Their ultra-low on-resistance and gate charge result in extremely low conduction and switching losses, helping users to save energy in high-power, high-performance switch-mode applications.


  • 650V maximum drain-to-source voltage
  • 100% UIS tested to withstand high energy pulses in the avalanche and commutation modes
  • Continuous maximum drain currents at case temperature of 100°C: 13A to 20A
  • Operating junction-temperature range: -55°C to 150°C


  • Solar inverters
  • Server and telecoms power systems
  • Switch-mode power supplies
  • Welding equipment
  • Uninterruptible power supplies
  • Battery chargers
  • External electric-vehicle charging stations
  • Lighting
Part NumberMaximum On-resistance (mΩ) at 10VGate Charge (nC) at 10VDrain Current (A) at 25°CReverse-recovery Charge (μC) at 25°CPackage
SiHA21N65EF18071211.2Thin-lead TO-220 FullPAK
SiHB21N65EF18071211.2D2PAK (TO-263)
SiHH21N65EF15768210.9PowerPAK 8x8