Vishay – 100V N-channel MOSFETs feature lower conduction losses

Vishay has introduced two 100V N-channel MOSFETs with very low on- resistance which enable power-system designers to benefit from higher efficiency, especially in equipment which is constantly on.

The SUM70040E and SUP70040E feature maximum on-resistance of 4mΩ, a low value which helps the user to keep conduction losses to a minimum when the host equipment is running. Use of the SUM70040E and SUP70040E also helps the power-system designer to achieve higher power density: their on-resistance is some 60% lower per mm2 of die area than Vishay’s previous-generation device.

The new MOSFETs are rated for a maximum drain-source voltage of 100V when operating from input voltages of up to 72V. They are provided with a gate-drive rating of 7.5V or a standard 10V.

These rugged parts, which tolerate a maximum junction temperature of 175°C, are suitable for use in harsh industrial applications.


  • High immunity to gate coupling and shoot-through
  • 120A maximum continuous drain current
  • 76nC typical total gate charge
  • 0.4°C/W junction-to-case thermal resistance


  • Motor drives
  • Solar micro-inverters
  • Industrial battery-management systems
  • AC-DC conversion and synchronous rectification
  • Point-of-load and telecoms DC-DC converters
  • Electric-vehicle charging stations
  • ORing in server power supplies with a redundant power architecture