Featuring low reverse-recovery charge and on-resistance the SiHx21N60EF SiHx47N60EF and SiHx70N60EF enable power-system designers to increase reliability and save energy in industrial telecoms computing and renewable-energy equipment.
Built on second-generation superjunction technology the EF series MOSFETs provide a complement to Vishay’s standard E series components offering devices which can be used in zero-voltage switching or soft-switching topologies such as phase-shifted bridges and LLC converter half-bridges. The SiHx21N60EF SiHx47N60EF and SiHx70N60EF increase reliability in these applications by offering a reverse-recovery charge some ten times lower than that of standard MOSFETs. This allows the devices to regain the ability to block the full breakdown voltage more quickly helping to avoid failure from shoot-through and thermal over-stress.
- ±30V maximum gate-source voltage
- Low input capacitance
- Low reverse-recovery time
- Withstands high energy pulses in the avalanche and commutation modes with limits guaranteed by 100% UIS testing
- Solar inverters
- Server and telecoms power systems
- Welding equipment
- Uninterruptible power supplies
- Battery chargers
- Semiconductor fabrication equipment
|Part Number||Maximum Drain- source Voltage (V)||Maximum Continuous Drain Current (A) at 25°C||Maximum On- resistance (mΩ) at 10V||Gate Charge (nC) at 10V||Package|