Vishay – Fast body-diode MOSFETs improve reliability and save energy

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Vishay Intertechnology has introduced three new devices in its 600V EF series of fast body-diode N-channel power MOSFETs.

Featuring low reverse-recovery charge and on-resistance the SiHx21N60EF SiHx47N60EF and SiHx70N60EF enable power-system designers to increase reliability and save energy in industrial telecoms computing and renewable-energy equipment.

Built on second-generation superjunction technology the EF series MOSFETs provide a complement to Vishay’s standard E series components offering devices which can be used in zero-voltage switching or soft-switching topologies such as phase-shifted bridges and LLC converter half-bridges. The SiHx21N60EF SiHx47N60EF and SiHx70N60EF increase reliability in these applications by offering a reverse-recovery charge some ten times lower than that of standard MOSFETs. This allows the devices to regain the ability to block the full breakdown voltage more quickly helping to avoid failure from shoot-through and thermal over-stress.

FEATURES

  • ±30V maximum gate-source voltage
  • Low input capacitance
  • Low reverse-recovery time
  • Withstands high energy pulses in the avalanche and commutation modes with limits guaranteed by 100% UIS testing

APPLICATIONS

  • Solar inverters
  • Server and telecoms power systems
  • Welding equipment
  • Uninterruptible power supplies
  • Battery chargers
  • Semiconductor fabrication equipment
Part NumberMaximum Drain- source Voltage (V)Maximum Continuous Drain Current (A) at 25°CMaximum On- resistance (mΩ) at 10VGate Charge (nC) at 10VPackage
SiHP21N60EF6002117656TO-220
SiHB21N60EF6002117656TO-263
SiHA21N60EF6002117656TO-220F
SiHG21N60EF6002117656TO-247AC
SiHG47N60EF6004765152TO-247AC
SiHW47N60EF6004765152TO-247AD
SiHG70N60EF6007038253TO-247AC
SiHW70N60EF6007038253TO-247AD

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