Vishay – Kelvin connections in new 600V MOSFETs reduce effects of gate loop inductance


Vishay Intertechnology is now offering its 600V E series power MOSFETs in a compact PowerPAK® 8×8 package which allows for an improved gate- drive circuit and faster switching.

Vishay’s new SiHH26N60E, SiHH21N60E, SiHH14N60E, and SiHH11N60E all feature a large drain terminal for low thermal resistance. Their low-profile, surface-mount PowerPAK package provides a space-saving alternative to conventional TO-220 and TO-263 solutions.

The construction of the package allows one of the Source pins to be arranged as a dedicated Kelvin source connection which separates the gate-drive return path from the main current-carrying source terminals.

This prevents the inherent voltage drop in the high-current path from reducing the gate-drive voltage applied to the MOSFET. This leads to faster switching and better noise immunity in power-supply designs.

Based on Vishay’s latest energy-efficient E series superjunction technology, the SiHH26N60E, SiHH21N60E, SiHH14N60E, and SiHH11N60E feature low on-resistance and a very low gate charge. These characteristics explain the MOSFETs’ low switching and conduction losses and high energy efficiency.

The MOSFETs are designed to withstand high energy pulses in the avalanche and commutation modes with limits guaranteed through 100% UIS testing.


  • Operating junction-temperature range: -55°C to 150°C
  • 0.48°C/W junction-to-case thermal resistance
  • 50A maximum pulsed drain current


  • Power-factor correction
  • Flyback converters
  • Two-switch forward converters for server and telecoms power supplies
  • HID and fluorescent ballast lighting
  • Consumer and computing power adapters
  • Motor drives
  • Solar inverters
  • Induction heating
Part NumberMaximum Gate- source Voltage (V)Maximum Continuous Drain Current (A) at 25°CMaximum On-resistance (Ω) at 10VTypical Gate- charge (nC) at 10VTypical Input Capacitance (pF)