Alliance Memory – 256Mbit SDRAM fits applications requiring high memory bandwidth

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The 3.3V AS4C16M16SA series of 256Mbits Synchronous DRAM (SDRAM) memory ICs from Alliance Memory provides an ideal complement to the FM4 S6E2D microcontrollers from Cypress Semiconductor, shown here.

The memory device is a high-speed CMOS SDRAM, internally configured as four banks of 4Mwords x 16 bits. Read and write accesses to the SDRAM are burst-oriented: accesses start at a selected location and continue for a programmed number of locations in a programmed sequence.

The AS4C16M16SA is available in two package styles: a 54-pin TSOP II package with a 22mm x 10mm footprint, and a 54-ball ball-grid array measuring 8mm x 8mm x 1.2mm. It is supplied in versions with either a commercial temperature range of 0°C to 70°C; an industrial temperature range of -40°C to 85°C; or an automotive temperature range of -40°C to 105°C.

• 5ns access time from clock
• Clock frequency: 143MHz or 166MHz
• LVTTL interface

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