Microsemi – SiC power MOSFETs offer high-speed and high-temperature capabilities

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Microsemi supplies a range of Silicon Carbide (SiC) power MOSFETs which offer fast-switching capability and stable high-temperature performance.

In powertrain applications in particular, the characteristics of the SiC material enable designers to create products which are smaller, lighter and more efficient, and which withstand higher peak temperatures, than equivalent silicon-based MOSFET or IGBT power switches.

Compared to high-voltage silicon MOSFETs, the SiC MOSFETs from Microsemi offer lower on-resistance, higher operating temperature, higher power density and lower switching losses. Because the Microsemi SiC MOSFETs are able to operate at an extremely high junction temperature, designers are able to specify a smaller, lighter heat-sink, saving space, weight and cost.

The parts also offer a very low reverse- recovery charge and reverse-recovery time, typically as low as 245ns in the case of the APT80SM120x parts. This means that the MOSFETs enable extremely fast switching, resulting in high efficiency, accurate regulation and a reduction in the size of supporting components.

FEATURES

  • Low temperature coefficient of on- resistance
  • Low gate charge
  • 8μs short-circuit withstand time
  • 175°C maximum junction temperature

APPLICATIONS

  • Automotive powertrain
  • Inverters in renewable energy generators
  • Industrial motor drives
  • Actuators in aerospace equipment
Part NumberVoltageCurrentOn-resistancePackage
APT40SM120B1,200V40A80mΩTO-247
APT40SM120S1,200V40A80mΩD3
APT40SM120J (32A)1,200V40A80mΩSOT-227
APT25SM120B1,200V25A140mΩTO-247
APT25SM120S1,200V25A140mΩD3
APT70SM70B700V70A53mΩTO-247
APT70SM70S700V70A53mΩD3
APT70SM70J700V70A53mΩSOT-227
APT80SM120B1,200V80A40mΩTO-247
APT80SM120S1,200V80A40mΩD3
APT80SM120J1,200V80A40mΩSOT-227
APT50SM120B1,200V50A50mΩTO-247
APT50SM120S1,200V50A50mΩD3
APT50SM120J1,200V50A50mΩSOT-227

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