Microsemi supplies a range of Silicon Carbide (SiC) power MOSFETs which offer fast-switching capability and stable high-temperature performance.
In powertrain applications in particular, the characteristics of the SiC material enable designers to create products which are smaller, lighter and more efficient, and which withstand higher peak temperatures, than equivalent silicon-based MOSFET or IGBT power switches.
Compared to high-voltage silicon MOSFETs, the SiC MOSFETs from Microsemi offer lower on-resistance, higher operating temperature, higher power density and lower switching losses. Because the Microsemi SiC MOSFETs are able to operate at an extremely high junction temperature, designers are able to specify a smaller, lighter heat-sink, saving space, weight and cost.
The parts also offer a very low reverse- recovery charge and reverse-recovery time, typically as low as 245ns in the case of the APT80SM120x parts. This means that the MOSFETs enable extremely fast switching, resulting in high efficiency, accurate regulation and a reduction in the size of supporting components.
- Low temperature coefficient of on- resistance
- Low gate charge
- 8μs short-circuit withstand time
- 175°C maximum junction temperature
- Automotive powertrain
- Inverters in renewable energy generators
- Industrial motor drives
- Actuators in aerospace equipment