The BUK7M6R3-40E from NXP Semiconductors is an N-channel MOSFET suited to automotive applications and which has a maximum 40V rating across a junction-temperature range of 25°C to the maximum 175°C.
The device, housed in an LFPAK33 (Power33) package, benefits from the use of NXP’s advanced TrenchMOS® technology. It is described as having a true standard-level gate, featuring a gate-source threshold voltage rating of 1V minimum at a junction temperature 175°C. This threshold-voltage value rises to a minimum of 2.4V when the junction temperature falls to 25°C.
The BUK7M6R3-40E offers high performance in switching operations, thanks to its low on-resistance of 5.2mΩ when sourcing a drain current of 20A. This low on-resistance value results in low conduction losses and helps the user to achieve high energy efficiency.
Non-repetitive drain-source avalanche energy is rated at a maximum 58.8mJ.
- AEC-Q101 qualified
- Repetitive avalanche rated
- Operating junction-temperature range:
-55°C to 175°C
- 12V automotive systems
- Solenoid control
- Transmission control
- Power-switching circuits