STMicroelectronics – 650V automotive SiC diode offers excellent switching characteristics


The STPSC20065-Y from STMicroelectronics is a Silicon Carbide (SiC) Schottky diode intended for use in high-power switching applications.

The wide-bandgap characteristics of the SiC material allow the design of a Schottky diode which achieves a high 650V rating. In addition, the STPSC20065-Y generates no reverse- recovery charge at turn-off, and ringing patterns are negligible. The minimal capacitive turn-off behaviour is consistent across the device’s entire operating-temperature range.

Used as a freewheeling or output-rectification diode, the STPSC20065-Y will enhance the performance of power supplies or inverters for which its rated voltage is suitable, while enabling a reduction in system size.


  • High forward surge capability
  • AEC-Q101 qualified
  • PPAP capable
  • Junction-temperature range: -40°C to 175°C


  • Power-factor correction circuits