The STPSC20065-Y from STMicroelectronics is a Silicon Carbide (SiC) Schottky diode intended for use in high-power switching applications.
The wide-bandgap characteristics of the SiC material allow the design of a Schottky diode which achieves a high 650V rating. In addition, the STPSC20065-Y generates no reverse- recovery charge at turn-off, and ringing patterns are negligible. The minimal capacitive turn-off behaviour is consistent across the device’s entire operating-temperature range.
Used as a freewheeling or output-rectification diode, the STPSC20065-Y will enhance the performance of power supplies or inverters for which its rated voltage is suitable, while enabling a reduction in system size.
- High forward surge capability
- AEC-Q101 qualified
- PPAP capable
- Junction-temperature range: -40°C to 175°C
- Power-factor correction circuits