STMicroelectronics’ SCTW100N65G2AG from is a 650V Silicon Carbide (SiC) MOSFET which is suitable for use in very high-temperature automotive power-switching applications.
Benefiting from ST’s innovative second- generation SiC MOSFET fabrication technology, the device has remarkably low on- resistance as a factor of area, coupled with very good switching performance. The variation in both on-resistance and switching losses is almost completely unaffected by junction temperature, which can reach a maximum of 200°C.
At a drain current of 50A and a junction temperature of 150°C, on-resistance is just 22mΩ. Total gate charge is rated at 215nC when switching a 50A load.
The SCTW100N65G2AG has a very fast and robust intrinsic body diode. The diode’s forward voltage is 3.5V at a forward current of 30A.