The BUK9M5R2-30E from Nexperia, the discrete power components business which was recently spun-off from NXP Semiconductors, is an N-channel logic- level MOSFET housed in a compact LFPAK33 (Power33) package.
Qualified to the AEC-Q101 standard, it is intended for use in high-performance automotive applications. Featuring a maximum junction temperature of 175°C, it is able to withstand the most thermally demanding environments, including automotive lamps and motors.
The BUK9M5R2-30E is rated for a maximum drain- source voltage of 30V, and a maximum drain current of 70A. Low on-state resistance of 4.3mΩ at a gate-source voltage of 5V and a drain current of 25A ensures that conduction losses are kept to a minimum.
- Withstands repetitive avalanche events
- 9.7nC gate-drain charge
- 1.58K/W thermal resistance from junction to mounting base
- 1.7V gate-source threshold voltage
- 21.8ns reverse-recovery time
- 12V automotive systems
- Solenoid control
- Transmission control
- Power switching