STMicroelectronics – 1,200V SiC MOSFET provides stable, efficient performance at up to 200°C


The SCT50N120 Silicon Carbide (SiC) power MOSFET extends the STMicroelectronics family of robust and efficient SiC power semiconductors. It features a maximum breakdown voltage of 1,200V and a maximum continuous- current capability of 65A at a case temperature of 25°C, and 50A at 100°C.

The high efficiency of the SCT50N120 is due in large part to its low on- resistance, which is rated at 59mΩ at a junction temperature of 150°C when sinking 40A. Switching performance is also consistent, benefitting from highly stable turn-off energy and gate charge over the full temperature range up to the maximum junction temperature of 200°C. The resulting low conduction and switching losses, combined with ultra-low leakage current, simplify thermal management and improve the reliability of the circuit.

As well as lowering energy losses, ST’s SiC MOSFETs also enable power systems to use switching frequencies up to three times higher than is possible with similarly rated silicon IGBTs. This means that designers can specify smaller external components and save size, weight and bill-of-materials costs. The SCT50N120’s high-temperature capability also helps to simplify the design of the cooling system in applications such as power modules for electric vehicles.

The MOSFET benefits from ST’s thermally- efficient HiP247TM package, which allows reliable operation at up to 200°C while maintaining compatibility with the industry- standard TO-247 footprint.


  • Very tight variation of on-resistance over temperature
  • Slight variation of switching losses over temperature
  • Very fast and robust intrinsic body diode
  • Low capacitance


  • Solar inverters
  • Uninterruptible power supplies
  • Motor drives
  • High-voltage DC-DC converters
  • Switch-mode power supplies