Vishay – 600V and 650V MOSFETs feature low-inductance package

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Vishay Intertechnology has extended its offering of 600V and 650V E series power MOSFETs with three N-channel devices in the compact, surface-mount PowerPAK® SO-8L package.

The 600V SiHJ8N60E and 650V SiHJ6N65E and SiHJ7N65E MOSFETs provide a space- saving and reliable alternative to MOSFETs in the TO-252 (DPAK) package. The devices benefit from reduced package inductance.

Measuring just 5mm x 6mm, the SiHJ8N60E, SiHJ6N65E, and SiHJ7N65E occupy only half as much board space as TO-252 devices, and are half as high. Also, the gullwing leads of the PowerPAK SO-8L package result in better board-level reliability when subjected to temperature cycling than MOSFETs in leadless DFN packages.

Based on Vishay’s energy-efficient E series superjunction technology, the SiHJ8N60E, SiHJ6N65E, and SiHJ7N65E feature a low product of gate charge and on-resistance, a key figure of merit for MOSFETs used in power-conversion applications. The MOSFETs produce extremely low conduction and switching losses, helping designers to reduce power consumption in PFC, flyback and two-switch forward converters, and in hard-switched topologies for High-Intensity Discharge (HID) and LED lighting.

FEATURES

  • Low input capacitance
  • Low switching and conduction losses
  • Avalanche energy-rated

APPLICATIONS

  • Switch-mode power supplies
  • Flyback converters
  • High-Intensity Discharge (HID) lamps
  • Fluorescent ballast lighting
  • Consumer devices
  • External power adaptors
Part NumberMaximum Drain-source Voltage (V)Gate-source Voltage (V)Maximum Continuous Drain Current (A) @ 25°CMaximum On-resistance (Ω) @ 10VGate Charge (nC) @ 10V
SiHJ8N60E600±308.00.52022
SiHJ6N65E650±305.60.86816
SiHJ7N65E650±307.90.59822

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