The 600V SiHJ8N60E and 650V SiHJ6N65E and SiHJ7N65E MOSFETs provide a space- saving and reliable alternative to MOSFETs in the TO-252 (DPAK) package. The devices benefit from reduced package inductance.
Measuring just 5mm x 6mm, the SiHJ8N60E, SiHJ6N65E, and SiHJ7N65E occupy only half as much board space as TO-252 devices, and are half as high. Also, the gullwing leads of the PowerPAK SO-8L package result in better board-level reliability when subjected to temperature cycling than MOSFETs in leadless DFN packages.
Based on Vishay’s energy-efficient E series superjunction technology, the SiHJ8N60E, SiHJ6N65E, and SiHJ7N65E feature a low product of gate charge and on-resistance, a key figure of merit for MOSFETs used in power-conversion applications. The MOSFETs produce extremely low conduction and switching losses, helping designers to reduce power consumption in PFC, flyback and two-switch forward converters, and in hard-switched topologies for High-Intensity Discharge (HID) and LED lighting.
- Low input capacitance
- Low switching and conduction losses
- Avalanche energy-rated
- Switch-mode power supplies
- Flyback converters
- High-Intensity Discharge (HID) lamps
- Fluorescent ballast lighting
- Consumer devices
- External power adaptors
|Part Number||Maximum Drain-source Voltage (V)||Gate-source Voltage (V)||Maximum Continuous Drain Current (A) @ 25°C||Maximum On-resistance (Ω) @ 10V||Gate Charge (nC) @ 10V|