It features a low maximum on-resistance of 4mΩ at a gate-source voltage of 10V for high efficiency and low conduction losses. It is capable of handling a maximum drain current of 117A, and of operating at a maximum junction temperature of 175°C.
• 1.4°C/W junction-to- case thermal resistance
• 2.5V maximum gate threshold voltage
• 73nC total gate charge