The PESD18VF1BSF from Nexperia, formerly the standard products division of NXP Semiconductors, is an ultra- low capacitance, bi-directional ESD protection diode which safeguards devices containing an NFC interface from damage caused by ESD strikes and other transient voltage events. It has a maximum reverse stand-off voltage of 18V.
A related part, the PESD24VF1BSF, features a maximum reverse stand-off voltage of 24V.
These devices are intended for use in space-constrained designs, such as consumer mobile products, in which an NFC antenna is integrated into the host product’s battery or battery cover. This provides an entry point for ESD strikes which could damage the NFC controller IC.
Housed in a DSN0603-2 (SOD962-2) leadless surface-mount package measuring 0.3mm x 0.6mm, a PESDxxVF1BSF diode protects one signal line from an ESD contact discharge of up to ±10kV, a rating which is consistent with the provisions of the IEC 61000-4-2 standard.
The devices’ low capacitance helps to make it easy to design the NFC antenna- matching circuit. In the PESD18VF1BSF, diode capacitance is rated at 0.28pF. In the PESD24VF1BSF, this value is 0.25pF.
- 1A maximum peak pulse current
- Junction-temperature range: -45°C to 125°C
- Maximum clamping voltage:
- 17V PESD24VF1BSF
- 16V PESD18VF1BSF
- 1nA reverse leakage current
- NFC antenna protection
- Protection of high-speed and standard data lines with high signal levels