Future Power Solutions – Meet the experts in wide bandgap power semiconductors

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SiC (Silicon Carbide) and GaN (Gallium Nitride) wide bandgap semiconductor materials offer superior thermal, switching and power-handling characteristics compared to silicon. With the price of SiC and GaN MOSFETs, diodes and modules falling, they are becoming increasingly attractive for mainstream applications in the industrial, automotive, military and aerospace markets.

By attending the wide bandgap technology seminar, you can learn about:
• The effect of choosing SiC or GaN components on system performance, size and cost
• Comparing discrete SiC components with hybrid Si-SiC and full SiC modules
• Implications for passive component selection and thermal management
• How to migrate successfully from superjunction MOSFETs to SiC or GaN MOSFETs
• Special considerations in the implementation of gate drivers and auxiliary power supply design

The seminars will take place in eight convenient city locations:

  • Quality Hotel Panorama Eklandagatan 51-53, 400 22 Göteborg, Suède – Gothenburg, Sweden – 19/9/2017
  • Château d’Apigné, Les Landes d’Apigné 35650 Le Rheu – Rennes, France – 4/10/2017
  • Hotel Novotel Campo de las Naciones.C/ Amsterdam, 3. Campo de Las Naciones. Madrid 28042 – Madrid, Spain – 10/10/2017
  • NH Hotel Avda. Zarautz, 120. 20018 San Sebastián – San Sebastian, Spain – 11/10/2017
  • Future Electronics office Teknobulevardi 3, 01530 Vantaa, Finlande – Helsinki, Finland – 22/11/2017
  • Future Electronics office A/S Skomagervej 13D Vejle DK-7100 – Jutland, Denmark – 29/11/2017
  • Villa Ottoboni – Via Padre E. Ramin1 – 35136 Padova – Padova, Italy – 31/1/2017
  • Hôtel Gatsby 36, Rue des Frères Lumière 69 680 Chassieu France – Lyon, France – Q4 2017 TBC

Apply to attend by e-mailing: FPS-EMEA@futureelectronics.com

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