The STGYA120M65DF2 from STMicroelectronics is a 650V IGBT developed using an advanced proprietary trench-gate field-stop structure. It can handle a continuous current of up to 120A at a case temperature of 100°C.
The device, one of the M series of IGBTs, gives the industry’s best trade-off between static and dynamic characteristics, featuring a collector-emitter saturation voltage of 1.65V and total switching energy of 6.2mJ when switching a collector current of 120A at a collector-emitter voltage of 400V.
The M series devices offer an excellent balance between performance and efficiency in inverter applications. They are particularly well suited to designs in which low losses and the ability to withstand short-circuits are essential.
The STGYA120M65DF2 is rated to withstand a short-circuit for 6μs.
An equivalent part, the STGYA120M65DF2AG, is AEC-Q101 qualified for use in automotive applications.
- Tight parameter distribution
- Safer parallelling
- Low thermal resistance
- Soft and very fast-recovery anti-parallel diode
- Junction-temperature range: -55°C to 175°C
- 50°C/W junction-to-ambient thermal resistance
- Motor-control systems
- Uninterruptible power supplies
- Power factor correction