STMicroelectronics – 650V IGBT combines low losses with excellent handling of short-circuits

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The STGYA120M65DF2 from STMicroelectronics is a 650V IGBT developed using an advanced proprietary trench-gate field-stop structure. It can handle a continuous current of up to 120A at a case temperature of 100°C.

The device, one of the M series of IGBTs, gives the industry’s best trade-off between static and dynamic characteristics, featuring a collector-emitter saturation voltage of 1.65V and total switching energy of 6.2mJ when switching a collector current of 120A at a collector-emitter voltage of 400V.

The M series devices offer an excellent balance between performance and efficiency in inverter applications. They are particularly well suited to designs in which low losses and the ability to withstand short-circuits are essential.

The STGYA120M65DF2 is rated to withstand a short-circuit for 6μs.

An equivalent part, the STGYA120M65DF2AG, is AEC-Q101 qualified for use in automotive applications.

FEATURES

  • Tight parameter distribution
  • Safer parallelling
  • Low thermal resistance
  • Soft and very fast-recovery anti-parallel diode
  • Junction-temperature range: -55°C to 175°C
  • 50°C/W junction-to-ambient thermal resistance

APPLICATIONS

  • Motor-control systems
  • Uninterruptible power supplies
  • Power factor correction

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