Vishay Intertechnology’s AEC-Q101 qualified SQJ202EP is a 12V MOSFET in a dual asymmetric power package which enables designers of automotive systems to save space and power in synchronous buck converters. The similar Vishay SQJ200EP MOSFET has a 20V rating.
The N-channel TrenchFET® devices combine a high- and a low-side MOSFET in a compact 5mm x 6mm PowerPAK® dual asymmetric package. By co-packaging two MOSFETs in an asymmetric package, with a larger low-side MOSFET for lower on-resistance and a smaller high-side MOSFET for faster switching, Vishay provides a high-performance alternative to standard dual devices, which do not offer the optimum combination of MOSFETs for high-current, high-frequency synchronous buck converters.
Compared to designs using discrete components, the SQJ200EP or SQJ202EP occupy less board space and can enable the designer to implement a more compact PCB layout.
The MOSFETs support high-temperature operation at up to 175°C. The SQJ202EP is well suited to applications with bus voltages of ≤8V, and offers extremely low maximum on- resistance of as little as 3.3mΩ at the low-side MOSFET.
For applications with higher bus voltages, the 20V SQJ200EP features a slightly higher maximum on-resistance of 3.7mΩ.
|Channel||1, 2||1, 2|
|Drain-source Voltage (V)||12||20|
|Maximum On-resistance (Ω)||At 10V gate-source voltage||6.5, 3.3||8.8, 3.7|
|Maximum On-resistance (Ω)||At 4.5V gate-source voltage||9.3, 4.5||12.4, 5.0|
|Total Gate Charge (nC)||At 10V gate-source voltage||14.5, 35.9||12, 29|
|Drain Current (A)||20, 60||20, 60|
- 100% tested for gate resistance and avalanche energy
- Operating-temperature range: -55°C to 175°C
- ±100nA gate-source leakage current
- Infotainment systems
- Car navigation systems
- Automotive LED lighting