Vishay – 600V and 650V MOSFETs feature improved reliability and reduced package inductance


Vishay Intertechnology’s 600V and 650V E series of power MOSFETs includes four N-channel devices in the compact PowerPAK® SO-8L package. Providing a space-saving alternative to MOSFETs in the TO-252 (DPAK) package, the 600V SiHJ10N60E and SiHJ8N60E MOSFETs, and the 650V SiHJ6N65E and SiHJ7N65E devices, offer high reliability and low package inductance.

The surface-mount PowerPAK SO-8L package measures just 5mm x 6mm. This means that these E series MOSFETs occupy only half the board space, at half the height, of devices in the TO-252 (DPAK) package. Also, compared to MOSFETs in leadless DFN packages, the gullwing lead construction of the PowerPAK SO-8L can offer improved board-level reliability when subjected to temperature cycling over the lifetime of the equipment.

Built on Vishay’s energy-efficient E series superjunction technology, the SiHJ10N60E, SiHJ8N60E, SiHJ6N65E and SiHJ7N65E feature low maximum on-resistance and gate charge. This produces a low product of gate charge and on-resistance, a crucial figure of merit for MOSFETs used in power conversion. These values translate into low conduction and switching losses, helping to save energy in power factor correction, flyback and two-switch forward converters, in power adaptors, and in hard-switched topologies for high-intensity discharge and LED lighting.

Part NumberMaximum Drain-source Voltage (V)Maximum Gate-source Voltage (V)On-resistance at 10V (Ω)Total Gate Charge at 10V (nC)Maximum Continuous Drain Current (A)Minimum Gate-source Threshold Voltage (V)


  • Low input capacitance
  • Reduced switching and conduction losses
  • Avalanche energy rated


  • Lighting
  • Industrial equipment
  • Telecoms equipment
  • Computing products
  • Consumer devices